SSM3K56CT

SSM3K56CT MOSFETs Silicon N-Channel MOS SSM3K56CT 1. Applications High-Speed Switching 2. Features (1) (2) 1.5-V gate drive voltage. Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration 1.Gate 2.Source 3.Drain CST3 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Channel temperature Storage temperature (Note 1) (Note 1),(Note 2) (Note 3) Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 20 ±8 800 1600 500 150 -55 to 150 mW  mA Unit V Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1% Note 3: Mounted on an FR4 board.(25.4 mm × 25.4...