Silicon P-Channel MOSFET
MOSFETs Silicon P-Channel MOS (U-MOS�)
SSM6J505NU
1. Applications
• Power Management Switches
2. Features
(1) 1.2 V gate...
Description
MOSFETs Silicon P-Channel MOS (U-MOS�)
SSM6J505NU
1. Applications
Power Management Switches
2. Features
(1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 12 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
UDFN6B
SSM6J505NU
1.2.5.6 Drain 3. Gate 4. Source
©2018-2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2012-05
2021-09-17 Rev.5.0
SSM6J505NU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
-12
V
VGSS
±6
Drain current (DC)
(Note 1)
ID
-12
A
Drain current (pulsed)
(Note 1),(Note 2)
IDP
-30
Power dissipation Power dissipation Channel temperature
(Note 3)
PD
t ≤ 10 s
(Note 3)
PD
Tch
1.25
W
2.5
W
150
�
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derati...
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