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SSM6K30FE

Part Number	SSM6K30FE
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOSFET
Published	Sep 14, 2014
Detailed Description	SSM6K30FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Π-MOS VII) SSM6K30FE ○ High-speed switching ○ DC-...
Datasheet	SSM6K30FE PDF File

Overview

SSM6K30FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Π-MOS VII) SSM6K30FE ○ High-speed switching ○ DC-DC Converter Unit: mm • Small package • Low RDS (ON): RDS(ON) = 210 mΩ (max) (@VGS = 10 V) : R DS(ON) = 420 mΩ (max) (@VGS = 4 V) • High-speed switching: ton = 19 ns (typ.
) : toff = 10 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Symbol VDS VGSS Rating Unit 20 V ±20 V 1,2,5,6: Drain 3: Gate 4: Source Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse ID 1.
2 A IDP 2.
4 PD (Note 1) 500 mW Tch 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-2N1J Note...

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SSM6K30FE Silicon N-Channel MOSFET - Toshiba Semiconductor

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