SSM6K32TU

SSM6K32TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K32TU ○ Relay drive, DC/DC converter application z z 4Vdrive Low on resistance: Ron = 440mΩ (max) (@VGS = 4 V) Ron = 300mΩ (max) (@VGS = 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25℃) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 60 ±20 2 6 500 150 −55~150 Unit V V A mW °C °C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Note: 1,2,5,6 : Drain 3 : Gate 4 : Source JEDEC JEITA TOSHIBA ⎯ ⎯ 2-2T1D Weight: 7.0 mg (typ.) Electrical Characteristics (Ta = 25℃) Characteristics Gate leakage current Drain cut-off current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON resistance Forward transfer admittance Input capac...