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SSM6K210FE

Toshiba Semiconductor
Part Number SSM6K210FE
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 14, 2014
Detailed Description SSM6K210FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K210FE ○ High-Speed Switching Applications ○...
Datasheet PDF File SSM6K210FE PDF File

SSM6K210FE
SSM6K210FE

Overview
SSM6K210FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K210FE ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit: mm • 4.
0-V drive • Low ON-resistance: Ron = 371 mΩ (max) (@VGS = 4.
0 V), Ron = 228 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V Drain current DC ID Pulse IDP 1.
4 A 2.
8 Drain power dissipation PD (Note1) 500 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C 1.
2.
5.
6 3.
4.
ES6 : Drain : Gate : Source JEDEC ― Note: Using continuously under heavy loads (e.
g.
the app...


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