SSM6J402TU

MOSFETs Silicon P-Channel MOS SSM6J402TU 1. Applications DC-DC Converters High-Speed Switching 2. Features (1) 4.0-V drive (2) Low drain-source on-resistance : RDS(ON) = 225 mΩ (max) (@VGS = -4 V) RDS(ON) = 117 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment UF6 SSM6J402TU 1,2,5,6: Drain 3: Gate 4: Source ©2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2008-01 2022-07-04 Rev.1.0 SSM6J402TU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -30 V VGSS ±20 V Drain current (DC) ID -2.0 A Drain current (pulsed) IDP -4.0 Power dissipation Channel temperature Storage temperature (Note 1) PD Tch Tstg 500 mW 150 � -55 to 150 � Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645...