SSM6J502NU

MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J502NU 1. Applications Power Management Switches 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 28.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 23.1 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit UDFN6B SSM6J502NU 1,2,5,6: Drain 3: Gate 4: Source ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2021-11-30 Rev.2.0 SSM6J502NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -20 V VGSS ±8 V Drain current (DC) (Note 1) ID -6.0 A Drain current (pulsed) Power dissipation t ≤ 10 s (Note 1), (Note 2) IDP (Note 3) PD -24.0 2 W Power dissipation (Note 3) 1 Channel temperature Storage temperature Tch 150 � Tstg -55 to 150 � Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliabi...