NVD5807N

NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS(on) High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS 40 V RDS(on) MAX 37 mW @ 4.5 V 31 mW @ 10 V D ID MAX 16 A 23 A Applications CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification G Value 40 "20 "30 23 16 PD IDM TJ, Tstg IS EAS 33 45 −55 to 175 23 29.4 W A °C A mJ Unit V V V A 1 2 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C Symbol VDSS VGS VGS ID S N−CHANNEL MOSFET 4 4 tp = 10 ms DPAK CASE 369AA (Surface Mount) STYLE 2 1 2 3 IPAK CASE 369D (Straight Lead DPAK) Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 14 A, L = 0.3 mH, VDS = 40 V) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain AYWW 58 07NG 4 Drain AYWW 58 07NG 1 2 3 Gate Drain Source = Assembly Location* = Year = Work Week = Device Code = Pb−Free Package Publication Order Number: NTD5807...