NVD5802N

NTD5802N, NVD5802N Power MOSFET Features 40 V, Single N−Channel, 101 A DPAK Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified 100% Avalanche Tested AEC Q101 Qualified − NVD5802N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS 40 V RDS(on) 4.4 mW @ 10 V 7.8 mW @ 5.0 V D ID 101 A 50 A Applications CPU Power Delivery DC−DC Converters Motor Driver MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Pulsed Drain Current tp=10ms Current Limited by Package TC = 25°C TC = 85°C TC = 25°C Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, Tstg IS dV/dt EAS PD ID Symbol VDSS VGS ID Value 40 "20 101 78 93.75 16.4 12.7 2.5 300 45 − 55 to 175 50 6.0 240 W A A °C A V/ns mJ W A Unit V V A G S N−Channel 4 1 2 3 CASE 369C DPAK (Bent Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain YWW 58 02NG 2 1 Drain 3 Gate Source Y WW 5802N G = Year = Work Week = Device Code = Pb−Free Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VGS = 10 V, L = 0.3 mH, IL(pk) = 40 A, RG = 25 W) Le...