SSM6J214FE

SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J214FE ○ Power Management Switch Applications 1.8 V drive Low ON-resistance: RDS(ON) = 149.6 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 77.6 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 57.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range Symbol Rating Unit VDSS -30 V VGSS ± 12 V ID (Note 1) -3.6 A IDP (Note 1) -7.2 PD (Note 2) 500 mW t = 10s 700 Tch 150 °C Tstg −55 to 150 °C ES6 1,2,5,6 ： Drain 3 ： Gate 4 ： Source JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2N1J reliability significantly even if the operating conditions (i.e. Weight: 3 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150°C during use. Note 2: Mounted on FR4 board. (...