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SSM3J56MFV
Silicon P-Channel MOSFET
Description
SSM3J56MFV TOSHIBA Field-Effect
Transistor
Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J56MFV ○ Load Switching Applications 1.2 V drive Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) Unit: mm ...
Toshiba Semiconductor
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SSM3J56MFV
Silicon P-Channel MOSFET
- Toshiba Semiconductor
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