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TJ20A10M3

Field Effect Transistor

Description

TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Applications Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) High forward transfer admittance: |Yfs| = 50 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −100 V) Enhancement-model: Vth = −2.0 to −4.0 V (VDS = −10 V, ID = −1 m...

Toshiba Semiconductor

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TJ20A10M3 Field Effect Transistor - Toshiba Semiconductor

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