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TK9A20DA

Toshiba Semiconductor
Part Number TK9A20DA
Manufacturer Toshiba Semiconductor
Description Silicon N-channel MOSFET
Features (1) Low drain-source on-resistance: RDS(ON) = 0.26 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3...
Published Sep 11, 2014
Datasheet PDF File TK9A20DA PDF File


TK9A20DA
TK9A20DA


Features
(1) Low drain-source on-resistance: RDS(ON) = 0.26 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK9A20DA 1: Gate (G) 2: Drain (...



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