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TK18A30D

Toshiba Semiconductor
Part Number TK18A30D
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Features (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3)...
Published Sep 11, 2014
Datasheet PDF File TK18A30D PDF File


TK18A30D
TK18A30D


Features
(1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18A30D 1: Gate (G) 2: Drain (D...



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