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TK46A08N1

Toshiba Semiconductor
Part Number TK46A08N1
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Features (1) Low drain-source on-resistance: RDS(ON) = 6.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VD...
Published Sep 10, 2014
Datasheet PDF File TK46A08N1 PDF File


TK46A08N1
TK46A08N1


Features
(1) Low drain-source on-resistance: RDS(ON) = 6.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK46A08N1 1: Gate...



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