MOSFETs Silicon N-Channel MOS (π-MOS)
TK4Q60DA
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain...
MOSFETs Silicon N-Channel MOS (π-MOS)
TK4Q60DA
1. Applications
Switching Voltage
Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK4Q60DA
New PW-Mold2
1: Gate 2: Drain (heatsink) 3: Source
1
2012-10-16
Rev.2.0
TK4Q60DA
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
3.5
A
Drain current (pulsed)
(Note 1)
IDP
14
Power dissipation
(Tc = 25)
PD
80
W
Single-pulse avalanche energy
(Note 2)
EAS
132
mJ
Avalanche current
IAR
3.5
A
Repetitive avalanche energy
(Note 3)
EAR
8
mJ
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concep...