SSF8205

SSF8205 Main Product Characteristics: D1 D2 VDSS RDS(on) ID 20V 20mohm(typ.) 4A SOT23-6 Marking and pin Assignment G1 G2 S1 S2 Schematic diagram Features and Benefits:      Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications Absolute max Rating: Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit 20 ± 10 4 25 1.25 -55 To 150 Unit V V A A W ℃ Thermal Resistance Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/W ©Silikron Semiconductor CO.,LTD. 2011.05.25 www.silikron.com Version : 2.1 page 1 of 9 SSF8205 Electrical Characterizes @TA=25℃ Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transcond...