MOSFET
SSF8205
Main Product Characteristics:
D1 D2
VDSS RDS(on) ID
20V 20mohm(typ.) 4A
SOT23-6 Marking and pin Assignment
G1...
Description
SSF8205
Main Product Characteristics:
D1 D2
VDSS RDS(on) ID
20V 20mohm(typ.) 4A
SOT23-6 Marking and pin Assignment
G1
G2
S1
S2
Schematic diagram
Features and Benefits:
Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications
Absolute max Rating:
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range
Symbol VDS VGS ID IDM PD TJ,TSTG
Limit
20 ± 10 4 25 1.25 -55 To 150
Unit
V V A A W ℃
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/W
©Silikron Semiconductor CO.,LTD.
2011.05.25 www.silikron.com
Version : 2.1
page 1 of 9
SSF8205
Electrical Characterizes @TA=25℃
Parameter
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transcond...
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