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TK16V60W Dataheets PDF



Part Number TK16V60W
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet TK16V60W DatasheetTK16V60W Datasheet (PDF)

MOSFETs Silicon N-Channel MOS (DTMOS) TK16V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16V60W DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that t.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK16V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16V60W DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 15.8 A Drain current (pulsed) (Note 1) IDP 63.2 Power dissipation (Tc = 25) PD 139 W Single-pulse avalanche energy (Note 2) EAS 179 mJ Avalanche current IAR 4 A Reverse drain current (DC) (Note 1) IDR 15.8 Reverse drain current (pulsed) (Note 1) IDRP 63.2 Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2013-05 1 2014-02-25 Rev.2.0 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 19.6 mH, RG = 25 Ω, IAR = 4 A TK16V60W Symbol Rth(ch-c) Max Unit 0.9 /W Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2014-02-25 Rev.2.0 TK16V60W 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol Test Condition IGSS IDSS V(BR)DSS Vth RDS(ON) VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 0.79 mA VGS = 10 V, ID = 7.9 A Min Typ. Max Unit   ±1 µA   10 600   V 2.7  3.7  0.16 0.19 Ω 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Effective output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness Symbol Test Condition Ciss Crss Coss Co(er) rg tr ton tf toff dv/dt VDS = 300 V, VGS = 0 V, f = 1 MHz VDS = 0 to 400 V, VGS = 0 V VDS = OPEN, f = 1 MHz See Figure 6.2.1 VDD = 0 to 400 V, ID = 7.9 A Min Typ. Max Unit  1350  pF  4   35   55   6  Ω  25  ns  50   5   100  50   V/ns Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Test Condition Min Typ. Max Unit Qg VDD ≈ 400 V, VGS = 10 V, ID = 15.8 A  38  nC Qgs1 Qgd  9   16  6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Diode dv/dt ruggedness Symbol Test Condition Min Typ. Max Unit VDSF IDR = 15.8 A, VGS = 0 V   -1.7 V trr IDR = 7.9 A, VGS = 0 V Qrr -dIDR/dt = 100 A/µs  280  ns  2.9  µC Irr  23  A dv/dt IDR = 7.9 A, VGS = 0 V, VDD = 400 V 15   V/ns 3 2014-02-25 Rev.2.0 7. Marking Fig. 7.1 Marking TK16V60W 4 2014-02-25 Rev.2.0 8. Characteristics Curves (Note) TK16V60W Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 VDSS - Ta Fig. 8.6 RDS(ON) - ID 5 2014-02-25 Rev.2.0 TK16V60W Fig. 8.7 RDS(ON) - Ta Fig. 8.8 IDR - VDS Fig. 8.9 C - VDS Fig. 8.10 EOSS - VDS Fig. 8.11 Vth - Ta Fig. 8.12 Dynamic Input/Output Characteristics 6 2014-02-25 Rev.2.0 TK16V60W Fig. 8.13 rth - tw (Guaranteed Maximum) Fig. 8.14 EAS - Tch (Guaranteed Maximum) Fig. 8.15 PD - Tc (Guaranteed Maximum) Fig. 8.16 Test Circuit/Waveform 7 2014-02-25 Rev.2.0 TK16V60W Fig. 8.17 Safe Operating Area (Guaranteed Maximum) Note: T.


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