Document
MOSFETs Silicon N-Channel MOS (DTMOS)
TK16V60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA)
3. Packaging and Internal Circuit
TK16V60W
DFN8x8
1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink)
Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins.
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
15.8
A
Drain current (pulsed)
(Note 1)
IDP
63.2
Power dissipation
(Tc = 25)
PD
139
W
Single-pulse avalanche energy
(Note 2)
EAS
179
mJ
Avalanche current
IAR
4
A
Reverse drain current (DC)
(Note 1)
IDR
15.8
Reverse drain current (pulsed)
(Note 1)
IDRP
63.2
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
2013-05
1
2014-02-25
Rev.2.0
5. Thermal Characteristics
Characteristics Channel-to-case thermal resistance Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 19.6 mH, RG = 25 Ω, IAR = 4 A
TK16V60W
Symbol Rth(ch-c)
Max
Unit
0.9
/W
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2014-02-25
Rev.2.0
TK16V60W
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance
Symbol
Test Condition
IGSS IDSS V(BR)DSS Vth RDS(ON)
VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 0.79 mA VGS = 10 V, ID = 7.9 A
Min Typ. Max Unit
±1
µA
10
600
V
2.7
3.7
0.16 0.19
Ω
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance Reverse transfer capacitance Output capacitance Effective output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness
Symbol
Test Condition
Ciss Crss Coss Co(er) rg
tr ton tf toff dv/dt
VDS = 300 V, VGS = 0 V, f = 1 MHz
VDS = 0 to 400 V, VGS = 0 V VDS = OPEN, f = 1 MHz See Figure 6.2.1
VDD = 0 to 400 V, ID = 7.9 A
Min Typ. Max Unit
1350
pF
4
35
55
6
Ω
25
ns
50
5
100
50
V/ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
Qg
VDD ≈ 400 V, VGS = 10 V, ID = 15.8 A
38
nC
Qgs1 Qgd
9
16
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Diode dv/dt ruggedness
Symbol
Test Condition
Min Typ. Max Unit
VDSF IDR = 15.8 A, VGS = 0 V
-1.7
V
trr
IDR = 7.9 A, VGS = 0 V
Qrr
-dIDR/dt = 100 A/µs
280
ns
2.9
µC
Irr
23
A
dv/dt IDR = 7.9 A, VGS = 0 V, VDD = 400 V
15
V/ns
3
2014-02-25
Rev.2.0
7. Marking
Fig. 7.1 Marking
TK16V60W
4
2014-02-25
Rev.2.0
8. Characteristics Curves (Note)
TK16V60W
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 VDSS - Ta
Fig. 8.6 RDS(ON) - ID
5
2014-02-25
Rev.2.0
TK16V60W
Fig. 8.7 RDS(ON) - Ta
Fig. 8.8 IDR - VDS
Fig. 8.9 C - VDS
Fig. 8.10 EOSS - VDS
Fig. 8.11 Vth - Ta
Fig. 8.12 Dynamic Input/Output Characteristics
6
2014-02-25
Rev.2.0
TK16V60W
Fig. 8.13 rth - tw (Guaranteed Maximum)
Fig. 8.14 EAS - Tch (Guaranteed Maximum)
Fig. 8.15 PD - Tc (Guaranteed Maximum)
Fig. 8.16 Test Circuit/Waveform
7
2014-02-25
Rev.2.0
TK16V60W
Fig. 8.17 Safe Operating Area (Guaranteed Maximum)
Note: T.