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TJ10S04M3L
MOSFETs
Description
TJ10S04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ10S04M3L 1. Applications Automotive Motor Drivers DC-DC Converters Switching Voltage
Regulator
s 2. Features (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 33.8 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 ...
Toshiba Semiconductor
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TJ10S04M3L
MOSFETs
- Toshiba Semiconductor
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