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TJ40S04M3L Dataheets PDF



Part Number TJ40S04M3L
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description MOSFETs
Datasheet TJ40S04M3L DatasheetTJ40S04M3L Datasheet (PDF)

TJ40S04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ40S04M3L 1. Applications • • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 7.0 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25 u.

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TJ40S04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ40S04M3L 1. Applications • • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 7.0 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3) (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating -40 -20/+10 -40 -80 68 72 -40 175 -55 to 175 W mJ A  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2012-02-02 Rev.3.0 TJ40S04M3L 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Symbol Rth(ch-c) Max 2.2 Unit /W Note 1: Ensure that the channel temperature does not exceed 175. Note 2: VDD = -25 V, Tch = 25 (initial), L = 47 µH, RG = 25 Ω, IAR = -40 A Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2012-02-02 Rev.3.0 TJ40S04M3L 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance (Note 4) Symbol IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) Test Condition VGS = -16/+10 V, VDS = 0 V VDS = -40 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 10 V VDS = -10 V, ID = -1 mA VGS = -6 V, ID = -20 A VGS = -10 V, ID = -20 A Min   -40 -30 -2.0   Typ.      8.7 7.0 Max ±10 -10   -3.0 13 9.1 mΩ V Unit µA Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Ciss Crss Coss tr ton tf toff See Figure 6.2.1. Test Condition VDS = -10 V, VGS = 0 V, f = 1 MHz Min        Typ. 4140 410 510 46 63 150 465 Max        ns Unit pF Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain charge Symbol Qg Qgs Qgd Test Condition VDD ≈ -32 V, VGS = -10 V, ID = -40 A Min    Typ. 83 55 28 Max    Unit nC 6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Reverse drain current (DC) Reverse drain current (pulsed) Diode forward voltage Reverse recovery time Reverse recovery charge (Note 5) (Note 5) Symbol IDR IDRP VDSF trr Qrr Test Condition   IDR = -40 A, VGS = 0 V IDR = -40 A, VGS = 0 V dIDR/dt = 50 A/µs Min      Typ.    39 22 Max -40 -80 1.2   V ns nC Unit A Note 5: Ensure that the channel temperature does not exceed 175. 3 2012-02-02 Rev.3.0 TJ40S04M3L 7. Marking (Note) Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 4 2012-02-02 Rev.3.0 TJ40S04M3L 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta 5 2012-02-02 Rev.3.0 TJ40S04M3L Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 PD - Tc (Guaranteed Maximum).


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