TJ8S06M3L

MOSFETs Silicon P-Channel MOS (U-MOS) TJ8S06M3L 1. Applications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TJ8S06M3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2017-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2011-03 2020-06-24 Rev.9.0 TJ8S06M3L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -8 A Drain current (pulsed) (Note 1) IDP -16 Power dissipation (Tc = 25) PD 27 W Single-pulse avalanche energy (Note 2) EAS 19 mJ Avalanche current IAR -8 A Channel temperature (Note 3) Tch 175  Storage temperature (Note 3) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the...