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TK4P60DB

Toshiba Semiconductor

Silicon N-Channel MOSFET


Description
MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60DB 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.2 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packa...



Toshiba Semiconductor

TK4P60DB

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