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TK30J25D

Toshiba Semiconductor
Part Number TK30J25D
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Features (1) Low drain-source on-resistance: RDS(ON) = 0.046 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (...
Published Sep 5, 2014
Datasheet PDF File TK30J25D PDF File


TK30J25D
TK30J25D


Features
(1) Low drain-source on-resistance: RDS(ON) = 0.046 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK30J25D 1: Gate (G) 2: Drain ...



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