TPCA8A11-H
MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)
TPCA8A11-H
1. Applications
• • • High-Effici...
TPCA8A11-H
MOSFETs Silicon N-Channel MOS (U-MOS-H/
Schottky Barrier Diode)
TPCA8A11-H
1. Applications
High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets
2. Features
(1) (2) (3) (4) (5) (6) Built-in a
schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 10 nC (typ.) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP Advance
1
2011-04-04 Rev.1.0
TPCA8A11-H
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (TC = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) (Note 4) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating 30 ±20 35 105 52 2.8 1.6 159 35 150 -55 to 150 W W W mJ A A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute...