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TPCA8A02-H Dataheets PDF



Part Number TPCA8A02-H
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet TPCA8A02-H DatasheetTPCA8A02-H Datasheet (PDF)

TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A02-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.5±0.1 1.27 8 0.4±0.1 5 Unit: mm 0.05 M A • • • • • • • Built-in a schottky barrier diode 6.0±0.3 High-speed switching Small gate charge: QSW = 8.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 90 S.

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