18NM80

STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω , 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — production data Features Order codes STB18NM80 STF18NM80 STP18NM80 STW18NM80 VDSS 800 V 800 V 800 V 800 V RDS(on) max < 0.295 Ω < 0.295 Ω < 0.295 Ω < 0.295 Ω ID 3 3 1 2 17 A 17 A (1) 17 A 17 A 1 D²PAK TO-220FP 1. Limited only by maximum temperature allowed 3 ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 2 1 3 TO-220 TO-247 Application ■ Figure 1. Internal schematic diagram Switching applications $ Description These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Table 1. Device summary Marking Package D²PAK TO-220FP 18NM80 STP18NM80 STW18NM80 TO-220 TO-247 ' 3 !-V Order codes STB18NM80 STF18NM80 Packaging Tape and reel Tube May 2012 This is information on a product in full production. Doc ID 15421 Rev 5 1/21 www.st.com 21 Contents STB18NM80, STF18NM80, STP18NM80, STW18NM80 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . ....