Document
Ordering number:EN3644
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1777/2SC4623
Very High-Definition CRT Display Video Output Applications
Features
· High fT : fT=400MHz (typ). · High breakdown voltage : VCEO≥250V(min). · High current.
· Small reverse transfer capacitance and excellent
high-frequnecy characteristic :
Cre=3.4pF (NPN), 4.2pF (PNP). · Complementary pair with the 2SA1777/2SC4623.
· Adoption of FBET process.
Package Dimensions
unit:mm 2042B
[2SA1777/2SC4623]
( ) : 2SA1777
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Output Capacitance
ICBO IEBO hFE1 hFE2
fT Cob
VCB=(–)150V, IE=0 VEB=(–)2V, IC=0 VCE=(–)10V, IC=(–)50mA VCE=(–)10V, IC=(–)250mA VCE=(–)30V, IC=(–)100mA VCB=(–)30V, f=1MHz
Reverse Transfer Capacitance
Cre VCB=(–)30V, f=1MHz
1 : Emitter 2 : Collector 3 : Base
SANYO : TO-126ML
Ratings (–)250 (–)250 (–)3 (–)300 (–)600 1.3 10 150
–55 to +150
Unit V V V mA mA W W ˚C ˚C
Ratings min typ
40* 20
400 (5.0)
4.2 (4.2)
3.4
max (–)0.1 (–)1.0 200*
Unit µA µA
MHz pF pF pF pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83198HA (KT)/41694TH (KOTO) 8-7036 No.3644–1/4
2SA1777/2SC4623
Parameter
Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage
Symbol
Conditions
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
IC=(–)50mA, IB=(–)5mA IC=(–)50mA, IB=(–)5mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0
* : The 2SA1777/2SC4623 are classified by 50mA hFE as follows :
40 C 80 60 D 120 100 E 200
Ratings min typ
(–)250 (–)250
(–)3
max (–)1.0 (–)1.0
Unit
V V V V V
No.3644–2/4
2SA1777/2SC4623
No.3644–3/4
2SA1.