GT80J101B
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101B
High Power Switching Applications
Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Conti...
