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GT5G102

Silicon N-Channel IGBT

Description

GT5G102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : VCE (sat) = 8 V (max) (IC = 130 A) · · Enhancement-mode 12 V gate drive · · · Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter volta...

Toshiba Semiconductor

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