KTC3964

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. Switching Applications Solenoid Drive Applications Temperature Compensated for Audio Amplifier Output Stage C KTC3964 EPITAXIAL PLANAR NPN TRANSISTOR A B D E F FEATURES High DC current gain : hFE = 500(min) (IC=400mA) Low Collector emitter saturation voltage : VCE(sat)=0.5V(max) (IC=300mA) H J K G L M MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 40 40 7 2 1.5 150 -55 150 UNIT V V V A W N 1 2 3 O P 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn On Time Switching Time Storage Time Fall Time SYMBOL ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf IB1 IB2 I B2 TEST CONDITION VCB=40V, IE=0 VEB=7V, IC=0 IC=10mA, IB=0 VCE=1V, IC=400mA IC=300mA, IB=1mA IC=300mA, IB=1mA VCE=2V, IC=100mA VCB=10V, IE=0, f=1MHz 20µsec INPUT I B1 100Ω OUTPUT MIN. 40 500 - TYP. 0.3 220...