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GT50MR21

Toshiba Semiconductor
Part Number GT50MR21
Manufacturer Toshiba Semiconductor
Description silicon N-channel IGBT
Published Sep 3, 2014
Detailed Description GT50MR21 Discrete IGBTs Silicon N-Channel IGBT GT50MR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switch...
Datasheet PDF File GT50MR21 PDF File

GT50MR21
GT50MR21

Overview
GT50MR21 Discrete IGBTs Silicon N-Channel IGBT GT50MR21 1.
Applications • Dedicated to Voltage-Resonant Inverter Switching Applications The product(s) described herein should not be used for any other application.
Note: 2.
Features (1) (2) (3) (4) 6.
5th generation The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
Enhancement mode High-speed switching IGBT : tf = 0.
18 µs (typ.
) (IC = 50 A) FWD : trr = 0.
45 µs (typ.
) (IF = 15 A) (5) (6) Low saturation voltage : VCE(sat) = 1.
7 V (typ.
) (IC = 50 A) High junction temperature : Tj = 175 (max) 3.
Packaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-3P(N) 1 2011-06-10 Rev.
1.
0 GT50MR21 4.
Ab...


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