GT10Q301

GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications Unit: mm · · · · · The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 1200 ±20 10 20 10 20 140 150 −55 to 150 Unit V V A JEDEC A ― ― 2-16C1C JEITA TOSHIBA Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range W °C °C Weight: 4.6 g (typ.) Equivalent Circuit Collector Gate Emitter 1 2002-10-29 GT10Q301 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Peak forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (diode) Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) Rth (j-c) IF = 10 A, VGE = 0 IF = 10 A, di/dt = −200 A/µs ― ― Inductive load VCC = 600 V, IC = 10 A VGG = ±15 V, RG = 75 Ω (Note) Test Condition VGE = ±20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 10 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Min ― ― 4....