GT50J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J121
High Power Switching Applications Fast Switching Applications
The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss : Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) Lo...
