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GT40G121
Silicon N-Channel IGBT
Description
GT40G121 TOSHIBA Insulated Gate Bipolar
Transistor
Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applications Unit: mm · · · Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter volta...
Toshiba Semiconductor
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GT40G121
Silicon N-Channel IGBT
- Toshiba Semiconductor
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