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GT40J321
Silicon N-Channel IGBT
Description
GT40J321 TOSHIBA Insulated Gate Bipolar
Transistor
Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.11 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 2.0 V (typ.) (IC = 40 A) Unit: mm Absolute Maximum Ratings (Ta = 25°...
Toshiba Semiconductor
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