GT50J328

GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Fourth Generation IGBT Enhancement mode type High speed : tf = 0.1 μs (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Diode forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 ±25 50 120 30 120 140 150 −55 to 150 Unit V V A A W °C °C JEDEC ― Note: JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 2-16C1C high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 4.6 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Marking TOSHIBA Gate Emitter 50J328 Part No. (or abbreviation code) Lot No. Note 1 Note 1: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS ...