GT8G136
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G136
Strobe Flash Applications
Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Ta=70℃(max))/ Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse Puls...
