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GT8G134
Silicon N-Channel IGBT
Description
GT8G134 TOSHIBA Insulated Gate Bipolar
Transistor
Silicon N Channel IGBT GT8G134 Strobe Flash Applications Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=2.5V(min))/ Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse Pulse (Note 1) (...
Toshiba Semiconductor
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