DatasheetsPDF.com
GT10G131
Silicon N-Channel IGBT
Description
GT10G131 TOSHIBA Insulated Gate Bipolar
Transistor
Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) Peak collector current: IC = 200 A (max) Built-in zener diode between gate and emitter SOP-8 package Absolute...
Toshiba Semiconductor
Download GT10G131 Datasheet
Similar Datasheet
GT10G101
Silicon N-Channel MOSFET
- ETC
GT10G101
Silicon N-Channel MOSFET
- Toshiba
GT10G102
Silicon N-Channel MOSFET
- ETC
GT10G131
Silicon N-Channel IGBT
- Toshiba Semiconductor
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
