GT10G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10G131
Strobe Flash Applications
Unit: mm
...
GT10G131
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT10G131
Strobe Flash Applications
Unit: mm
5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) Peak collector current: IC = 200 A (max) Built-in zener diode between gate and emitter SOP-8 package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
400
V
Gate-emitter voltage
DC
VGES
±6
V
Pulse
VGES
±8
Collector current
Pulse
(Note 1)
ICP
200
A
Collector power
(Note 2a)
PC (1)
1.9
W
dissipation(t=10 s)
(Note 2b)
PC (2)
1.0
W
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1.2.3 Emitter
4
Gate
5.6.7.8 Collector
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1C
Weight: 0.08 g (typ.)
Circuit Configuration
8765
Thermal Characteristi...