MOSFETs
TPCA8063-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPCA8063-H
1. Applications
• • • High-Efficiency DC-DC Converters N...
Description
TPCA8063-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPCA8063-H
1. Applications
High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets
2. Features
(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 5.9 nC (typ.) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP Advance
1
2011-04-13 Rev.2.0
TPCA8063-H
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) (Note 4) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating 30 ±20 22 66 35 2.8 1.6 125 22 150 -55 to 150 W W W mJ A A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the ...
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