Ordering number:EN2925A
NPN Triple Diffused Planar Silicon Transistor
2SC4257
1200V/30mA High-Voltage Amplifier, High-...
Ordering number:EN2925A
NPN Triple Diffused Planar Silicon
Transistor
2SC4257
1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage. · Small Cob. · Wide ASO. · High reliability (Adoption of HVP process).
Package Dimensions
unit:mm 2010C
[2SC4257]
10.2 3.6 5.1 2.7 6.3 4.5 1.3
18.0
5.6
1.2
14.0
15.1
0.8
0.4
1
2
3 2.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
2.55
2.55
1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46
Ratings 1500 1200 5 30 100 1.75 150 –55 to +150
Unit V V V mA mA W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) VCB=1200V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1.5mA VCE=10V, IC=1.5mA IC=3mA, IB=0.6mA 1500 1200 5 2.0 10 6 5 2 Conditions Ratings min typ max 1 1 60 MHz V V V V V pF Unit µA µA
IC=3mA, IB=0.6mA V(BR)CBO IC=100µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ V(BR)EBO IE=100µA, IC=0 Cob VCB=100V, f=1MHz
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