Part Number |
K1404 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1404 |
Datasheet |
K1404 Datasheet (PDF) |
2SK1404
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK1404
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 600 ±30 5 20 5 35 150 –55 to +150
Unit V V A A A W °C °C
2
2SK1404
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 600 ±30 — — 2.0 — 3.0 — — — — — — — — — Typ — — — — — 1.1 5.0 1000 250 45 12 45 105 55 0.9 500 Max — — ±10 25.