Part Number |
K1328 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1328 |
Datasheet |
K1328 Datasheet (PDF) |
2SK1328, 2SK1329
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3PFM
D G
1
2
3
S
1. Gate 2. Drain 3. Source
2SK1328, 2SK1329
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1328 2SK1329 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500 ±30 12 48 12 60 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1328, 2SK1329
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1328 V(BR)DSS 2SK1329 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = .