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Part Number K1328
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1328
Datasheet K1328 DatasheetK1328 Datasheet (PDF)

  K1328   K1328
2SK1328, 2SK1329 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1328, 2SK1329 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1328 2SK1329 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 12 48 12 60 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1328, 2SK1329 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1328 V(BR)DSS 2SK1329 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = .



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