IGBTs
Trench Gate, High Speed, IGBTs
For PDP Applications
IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1
VCES = ICP = VCE(sat) ≤
90N3...
Description
Trench Gate, High Speed, IGBTs
For PDP Applications
IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1
VCES = ICP = VCE(sat) ≤
90N33TC
330V 360A 1.80V
90N33TCD1
Symbol VCES VGES VGEM IC25 IC(RMS) IC110 ICP ICP PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C Continuous Transient TC= 25°C (Chip Capability) Lead Current Limit TC = 110°C TC < 150°C, tp < 10μs TC < 150°C, tp < 10μs, Duty cycle < 1% TC = 25°C
Maximum Ratings 330 ±20 ±30 90 75 38 60 360 200 -55 ... +150 150 -55 ... +150 V V V A A A A A W °C °C °C °C °C Nm/lb.in. g g G = Gate E = Emitter
G C E C (Tab)
TO-263 AA (IXGA)
G E C (Tab)
TO-3P (IXGQ)
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-3P) TO-263 TO-3P
300 260 1.13/10 2.5 5.5
C = Collector Tab = Collector
Features Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C VCE = 0V, VGE = ±20V VGE = 15V, IC = 20A, Note 1 IC = 45A TJ = 125°C IC = 90A TJ = 125°C 1.54 1.54 1.82 1.95 Characteristic Values Min. Typ. Max. 330 3.0 5.0 1 200 ±200 1.40 1.80 V V μA μA nA V V V V V
Low VCE(sat)
- for minimum On-State Conduction Losses Fast Switching Applications
PDP Screen Drivers
VCE = VCES, VGE = 0V
© 2011 IXYS CORPORATION, All Rights Reserved
DS99754B (07/11)
IXGQ90N33TCD1 IXGA90N33TC IXGQ90N33TC
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Cies Coes Cres Qg Qge Qgc td(on) tr td(off) t...
Similar Datasheet
- IXGA90N33TC IGBTs - IXYS Corporation