MXP6004CTS

MXP6004CTS 60V N-Channel MOSFET Applications: ● ● Power Supply DC-DC Converters VDS 60V RDS(ON)(MAX) 4mΩ ID 183A Features: ● ● ● ● Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS Capability Ordering Information Park Number MXP6004CTS Package TO220 Brand MXP TO220 Pin Definition and Inner Circuit Absolute Maximum Ratings Symbol VDSS ID IDM PD VGS TJ and Tstg Drain-to-Source Voltage Continuous Drain Current Parameter TC=25℃ unless otherwise specified Value Silicon Limited Package Limited 60 183 80 732 268 +/-20 -55 to 175 Unit V A W V ℃ Pulsed Drain Current @VGS=10V Power Dissipation Gate-to-Source Voltage Operating Junction and Storage Temperature Range Avalanche Characteristics Symbol EAS① IAS TC=25℃ unless otherwise specified Parameter Value 200 Figure 9 Unit mJ A Single Pulse Avalanche Energy (VDS=30V, VGS=10V, Rg=25Ω, L=1mH) Single Pulse Avalanche Current Thermal Resistance Symbol RθJC RθJA Parameter Max 0.56 62 Unit ℃/W ℃/W Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ① : Guarantee number. ©MaxPower Semiconductor Inc. MXP6004CTS Ver.01 May. 2013 Page1 MXP6004CTS 60V N-Channel MOSFET OFF Characteristics Symbol V(BR)DSS IDSS IGSS Parameter TJ=25℃ unless otherwise specified Min Typ Max Unit 60 1 100 100 100 V uA nA Test Conditions VGS=0V, ID=250uA VDS=48V, VGS=0V VDS=48V, VGS=0V, TJ=125 ℃ Drain-to-Source Breakdown Voltage Drain-to-Source Leakage C...