IRGP6690DPbF

VCES = 600V IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 75A Applications Welding H Bridge Converters IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CC C G E n-channel G Gate GCE IRGP6690DPbF TO-247AC C Collector E GC IRGP6690D-EPbF TO-247AD E Emitter Features Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, RoHS compliant Benefits High efficiency in a wide range of applications Optimized for welding and H bridge converters Improved reliability due to rugged hard switching performance and higher power capability Enables short circuit protection scheme Excellent current sharing in parallel operation Environmentally friendly Base part number IRGP6690DPBF IRGP6690D-EPBF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP6690DPBF IRGP6690D-EPBF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C IC @ TC = 100°C Continuous Collector Current Continuous Collector Current ICM Pulse Collector Current, VGE = 15V ILM Clamped Inductive Load Current, VGE = 20V  IFRM @ TC = 100°C Diode Repetitive Peak Forward Current IFM Diode Maximum Forward Current  VGE Continuous Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation ...