MOSFETs Silicon P-Channel MOS (U-MOS�)
TPCC8107
1. Applications
• Motor Drivers • DC-DC Converters • Switching Voltage R...
MOSFETs Silicon P-Channel MOS (U-MOS�)
TPCC8107
1. Applications
Motor Drivers DC-DC Converters Switching Voltage
Regulators
2. Features
(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 23.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA)
3. Packaging and Internal Circuit
TPCC8107
TSON Advance
1,2,3: Source 4: Gate 5, 6, 7, 8: Drain
©2017-2023
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2012-07
2023-12-11 Rev.5.0
TPCC8107
4. Absolute Maximum Ratings (Note) (Ta = 25� unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-60
V
Gate-source voltage
VGSS
-20/+10
Drain current (DC)
(Note 1)
ID
-25
A
Drain current (pulsed) Power dissipation
(Note 1)
IDP
(Tc = 25�)
PD
-75
46.8
W
Power dissipation
(t = 10 s)
(Note 2)
PD
2.27
W
Power dissipation
(t = 10 s)
(Note 3)
PD
0.84
W
Single-pulse avalanche energy
(Note 4)
EAS
63.0
mJ
Avalanche current Channel temperature
IAR
(Note 5)
Tch
-25
A
175
�
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) ...