TPC8062-H

TPC8062-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8062-H 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Equipment 2. Features (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 10 s) (t = 10 s) (Note 1) (Note 1) (Note 2) (Note 3) (Note 4) Symbol VDSS VGSS ID IDP PD PD EAS IAR Tch Tstg Rating 30 ±20 18 72 1.9 1.0 210 18 150 -55 to 150 W W mJ A  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Hand...