MOSFETs
TPC8058-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8058-H
1. Applications
• • • High-Efficiency DC-DC Converters Not...
Description
TPC8058-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8058-H
1. Applications
High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets
2. Features
(1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate change: QSW = 12 nC (typ.) Low drain-source on-resistance: RDS(ON) = 3.2 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 10 s) (t = 10 s) (Note 1) (Note 1) (Note 2) (Note 3) (Note 4) Symbol VDSS VGSS ID IDP PD PD EAS IAR Tch Tstg Rating 30 ±20 18 72 1.9 1.0 421 18 150 -55 to 150 W W mJ A A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handlin...
Similar Datasheet
- TPC8058-H MOSFETs - Toshiba Semiconductor